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| Walter Houser Brattain | |||
|
Amoy,
China 10.February.1902 - Seattle Wash, USA 13.October.1987
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|
Bibliography | |||
| 1926 | Oscillographic study of
discharge of
condenser through inductance and resistance and spark gap Walter Houser
Brattain University of Oregon, 1926 - 20 pagine |
||
| 1930 | Design of a portable
temperature-controlled
piezo oscillator V. E. Heaton, Walter Houser Brattain, United States.
National Bureau of StandardsU.S. Dept. of Commerce, Bureau of
Standards, 1930 - 6 pagine | ||
| 1937 | 07 10 1937 US2239770 ELECTRICALLY
CONDUCTIVE DEVICE AND THE MANUFACTURE THEREOF |
||
| 1942 | 20 01
1942 CA402409 ELECTRICALLY
CONDUCTIVE DEVICE | ||
| 1943 | 28
07 1943 US2438110 ELECTRICAL
TRANSLATING MATERIALS AND DEVICES AND METHOD OF MAKING THEM | ||
| 1944 | 11
05 1944 US2605344 MAGNETOMETER
HEAD | ||
| 1944 | 06 07 1944
Patent US 2605072 Integral-drive
magnetometer head | ||
| 1944 | 07
07 1944 US2565799 WAVE
TRAIN MAGNETOMETER | ||
| 1946 | 20
02 1946 US2537255 LIGHT-SENSITIVE
ELECTRIC DEVICE | ||
| 1946 | 24 07 1946 US2537256
Light-sensitive
electric device | ||
| 1947 | 17 01 1947 US2537257
Light-sensitive
electric device | ||
| 1948 | J.
Bardeen and W. Brattain, "The
Transistor, A Semiconductor
Triode," Physical Review, vol. 74, no. 2, pp. 230-231, 1948. | ||
| 1948 | 26 02 1948 NL54054 Three-electrode
circuit element utilizing semiconductor materials ( US2524034-1950 BE486170-1948 BE484779-1948 NL84054-1957 NL85856-1957 DE 966492-1957 FR975245-1951 FR972207-1951 FR978836-1951 GB694021-1953 GB694023-1953 CH277131-1951 CH273525-1951 ) (1) | ||
| 1948 | 26 02
1948 NL85856 Three-electrode
circuit element utilizing semiconductor materials ( US2524034-1950 BE486170-1948 BE484779-1948 NL84054-1957 NL85856-1957 DE 966492-1957 FR975245-1951 FR972207-1951 FR978836-1951 GB694021-1953 GB694023-1953 CH277131-1951 CH273525-1951 ) (1) | ||
| 1948 | 26 02 1948
US2524034 Three-electrode
circuit element utilizing semiconductor materials (US2524034-1950 BE486170-1948 BE484779-1948 NL84054-1957 NL85856-1957 DE 966492-1957 FR975245-1951 FR972207-1951 FR978836-1951 GB694021-1953 GB694023-1953 CH277131-1951 CH273525-1951 ) (1) | ||
| 1948 | 17
06 1948 US2524035 THREE-ELECTRODE
CIRCUIT ELEMENT UTILIZING SEMICONDUCTIVE MATERIALS | ||
| 1948 | 10 09 1948 GB 694021
BARDEEN JOHN; BRATTAIN WALTER Three-electrode
circuit element utilizing semiconductor materials ( US2524034-1950 BE486170-1948 BE484779-1948 NL84054-1957 NL85856-1957 DE 966492-1957 FR975245-1951 FR972207-1951 FR978836-1951 GB694021-1953 GB694023-1953 CH277131-1951 CH273525-1951 ) (1) | ||
| 1948 | 11 09 1948
BE484779 Three-electrode
circuit element utilizing semiconductor materials ( US2524034-1950 BE486170-1948 BE484779-1948 NL84054-1957 NL85856-1957 DE 966492-1957 FR975245-1951 FR972207-1951 FR978836-1951 GB694021-1953 GB694023-1953 CH277131-1951 CH273525-1951 ) (1) | ||
| 1948 | 23 09 1948
FR972207 Three-electrode
circuit element utilizing semiconductor materials ( US2524034-1950 BE486170-1948 BE484779-1948 NL84054-1957 NL85856-1957 DE 966492-1957 FR975245-1951 FR972207-1951 FR978836-1951 GB694021-1953 GB694023-1953 CH277131-1951 CH273525-1951 ) (1) | ||
| 1948 | 18 11 1948
FR975245 Three-electrode
circuit element utilizing semiconductor materials ( US2524034-1950 BE486170-1948 BE484779-1948 NL84054-1957 NL85856-1957 DE 966492-1957 FR975245-1951 FR972207-1951 FR978836-1951 GB694021-1953 GB694023-1953 CH277131-1951 CH273525-1951 ) (1) | ||
| 1948 | 07 12 1948 BE486170 Three-electrode
circuit element utilizing semiconductor materials ( US2524034-1950 BE486170-1948 BE484779-1948 NL84054-1957 NL85856-1957 DE 966492-1957 FR975245-1951 FR972207-1951 FR978836-1951 GB694021-1953 GB694023-1953 CH277131-1951 CH273525-1951 ) (1) | ||
| 1948 | 29
12 1948 US2663829 -
SEMICONDUCTOR
TRANSLATOR | ||
| 1949 | 11 01
1949 FR978836 Three-electrode
circuit element utilizing semiconductor materials ( US2524034-1950 BE486170-1948 BE484779-1948 NL84054-1957 NL85856-1957 DE 966492-1957 FR975245-1951 FR972207-1951 FR978836-1951 GB694021-1953 GB694023-1953 CH277131-1951 CH273525-1951 ) (1) | ||
| 1949 | 20 01
1949 DE966492 Three-electrode
circuit element utilizing semiconductor materials ( US2524034-1950
BE486170-1948 BE484779-1948 NL84054-1957
NL85856-1957 DE 966492-1957 FR975245-1951
FR972207-1951 FR978836-1951 GB694021-1953
GB694023-1953 CH277131-1951
CH273525-1951 ) | ||
| 1949 | 25 02
1949 GB694023 Three-electrode
circuit element utilizing semiconductor materials ( US2524034-1950 BE486170-1948 BE484779-1948 NL84054-1957 NL85856-1957 DE 966492-1957 FR975245-1951 FR972207-1951 FR978836-1951 GB694021-1953 GB694023-1953 CH277131-1951 CH273525-1951 ) (1) | ||
| 1949 | 15 04 1949 CA461166 ELECTRICAL
TRANSLATING MATERIAL AND DEVICE AND METHOD OF MAKING THEM | ||
| 1949 | 15
09 1949 US2586597 - Oscillation
generator | ||
| 1949 | 15
09 1949 US2589658 -SEMICONDUCTOR
AMPLIFIER AND ELECTRODE STRUCTURE THEREFOR | ||
| 1949 | 15
09 1949 US2617865 -SEMICONDUCTOR
AMPLIFIER AND ELECTRODE STRUCTURES THEREFOR | ||
| 1949 | Walter
H. Brattain, J. Bardeen Principi
fisici dell'azione del transistore ( BSTJ aprile
1949 pag.
239) | ||
| 1949 | J.
Bardeen and W. Brattain, "Physical
Principles Involved in Transistor Action," Physical Review, vol. 75,
no. 8, pp. 1208-1226, 1949. | ||
| 1949 | J. Bardeen
and
W. Brattain
Conductivity of Germanium Phys
Rev.
75: 1216 (1949) | ||
| 1951 | 31 07
1951 CA475747 Light-sensitive
electric device | ||
| 1951 | 15 02
1951 CH273525 Three-electrode
circuit element utilizing semiconductor materials ( US2524034-1950 BE486170-1948 BE484779-1948 NL84054-1957 NL85856-1957 DE 966492-1957 FR975245-1951 FR972207-1951 FR978836-1951 GB694021-1953 GB694023-1953 CH277131-1951 CH273525-1951 ) (1) | ||
| 1951 | 03 07 1951
CA475041 THREE
ELECTRODE CIRCUIT ELEMENTS UTILIZING SEMICONDUCTOR MATERIALS | ||
| 1951 | 15 08
1951 CH277131 Three-electrode
circuit element utilizing semiconductor materials (
US2524034-1950 BE486170-1948
BE484779-1948 NL84054-1957
NL85856-1957 DE 966492-1957 FR975245-1951
FR972207-1951
FR978836-1951 GB694021-1953 GB694023-1953
CH277131-1951
CH273525-1951 ) (1) | ||
| 1952 | 19 08 1952 CA485972
THREE-ELECTRODE
CIRCUIT ELEMENT UTILIZING SEMICONDUCTIVE MATERIALS | ||
| 1953 | 16
10 1953 US2870344 SEMICONDUCTOR
DEVICES | ||
| 1955 | Walter
H. Brattain, C.G. B. Garrett Esperimenti
sulla interfase tra Ge e un elettrolita ( BSTJ gennaio 1955 pag. 129) | ||
| 1955 | 11 01
1955 CA509125 SEMI-CONDUCTOR
TRANSLATORS | ||
| 1955 | 08
06 1955 US2777974 PROTECTION
OF SEMICONDUCTIVE DEVICES BY GASEOUS AMBIENTS | ||
| 1956 | Walter
H. Brattain Surface
properties of semiconductors -Nobel Lecture 11 dicembre 1956
| ||
| 1956 | Walter
H. Brattain, C.G. B. Garrett
Misure
combinate dell'effeto di campo, della fototensione e della
fotoconduttività di superficie ( BSTJ settembre 1956 pag.
1619) | ||
| 1956 | Development
of concepts in
semiconductor research: Richtmyer Lecture 1956 Walter Houser
Brattain American Telephone and Telegraph Co., 1956 - 5 pagine |
||
| 1956 | Envelope 1973 July 10, New York,
N.Y., First Day of Issue Walter Houser Brattain, William Shockley, John
Bardeen 1973 The three men were awarded the Nobel Prize for
Physics, 1956. | ||
| 1956 | |||
| 1958 | Walter
H. Brattain I0°
anniversario del transistor ( PIRE -Procedeens
of the Inst. of Radio Engineers giugno
1958 pag. 953) |
||
| 1959 | 28
04 1959 CA574960 PROTECTION
OF SEMICONDUCTIVE DEVICES BY GASEOUS AMBIENTS |
||
| 1960 | 12 04
1960 CA595946 SEMICONDUCTOR
DEVICES | ||
| 1962 | Distribution
of potential across low-index
crystal planes of germanium contacting an aqueous solution Walter
Houser Brattain, P. J. BoddyNational Academy of Science, 1962 - 8
pagine | ||
| 1962 | 22 10 1947 US3022374 - SCANNING
INFRA-REB DETECTOR AND' RECORDER' |
||